ENEE 416: Integrated Circuit (IC) Fabrication Lab (Fall 2011)

Assigned: 09/22/11

Due: 09/28/11, 5 p.m.

Group: Matthew Duty and Philip Sandborn

Topic: Wet Isotropic and Anisotropic Etching of Si

Explain the concepts and fundamentals of wet isotropic and anisotropic etching of Si. Give examples of etching chemistry, etch masks, and etch stops. Explain the differences between the two etching and their respective applications. Prepare a 10-minute PowerPoint presentation, a 2-3 page report using font Times New Roman 11 (including figures and references), and 4 problems with solutions. Please e-mail the PowerPoint presentation, the report (in pdf or Word), problems (in pdf or Word) and solutions (in pdf or Word) to Prof. Ghodssi and Mike Fan.

*Wet Isotropic and Anisotropic Etching of Si Paper
*Wet Isotropic and Anisotropic Etching of Si Presentation
*Wet Isotropic and Anisotropic Etching of Si Questions
*Wet Isotropic and Anisotropic Etching of Si Solutions