|
Versailles 1 & 2 |
Versailles 3 & 4 |
Montgomery |
|
Wednesday December 7, 2005
|
| 1:30–3:30 PM |
WP1: Oxides and Dielectrics I |
WP2: GaN Material and Characterization |
WP3: Molecular and Organic Electronics |
| 3:45–5:30 PM |
WP4: Oxides and Dielectrics II |
WP5: GaN Devices and Characterization |
WP6: MEMS & Integrated Sensors |
| 7:30–10:00 PM |
POSTER SESSION |
|
Thursday December 8, 2005
|
| 8:00–10:30 AM |
PLENARY SESSION |
| 10:45–12:15 AM |
TA1: Oxides and Dielectrics III |
TA2: SiC Materials and Characterization |
TA3: Narrowbandgap materials and devices |
| 1:30–3:30 PM |
TP1: Strained MOS and NDR Devices |
TP2: Wide Bandgap Power Switching Devices |
TP3: Si-Based Nanoelectronics |
| 3:45–5:45 PM |
TP4: SiGe HBTs and Strained FETs |
TP5: ZnO Material and Devices |
TP6: Silicon on Insulator |
| 7:00–10:00 PM |
BANQUET |
|
Friday December 9, 2005
|
| 8:00–10:00 AM |
FA1: High Frequency and Terahertz |
FA2: Novel Devices I |
FA3: Emerging Nanoelectronic Materials and Devices |
| 10:15–12:15 AM |
FA4: Device Modeling I |
FA5: Novel Devices II |
FA6: Photonics |
| 1:15–3:15 PM |
FP1: Device Modeling II |
FP2: Advanced Processing and Characterization Techniques I |
FP3: Optoelectronics and LED Lighting |
| 3:30–5:30 PM |
FP4: Device Modeling III |
FP5: Advanced Processing and Characterization Techniques II |
FP6: Flexible Electronics |
