December 10-12, 2003
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| 2003 International Semiconductor Device Research Symposium |
Technical Program
- Technical Session Schedule (PDF, 1 page), online version below
- Complete Schedule of Presentations and Posters (PDF, 35 pages)
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Date |
Time |
Mirage I |
Mirage II |
Kaleidoscope |
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Wed. |
12:00pm - 7:00pm: Conference Registration |
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1:30pm -3:30pm |
GaN Optoelectronics and LED Lighting | SiGe HBT's and Quantum Devices | Novel Dielectrics I | |
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3:45pm - 5:45pm |
Photonics and Optoelectronics I | Strained Si/SiGe FETs | Novel Dielectrics II | |
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7:30pm - 10:00pm |
Poster Session and Welcome Reception | |||
| Thurs. 12/11 |
8:00am - 10:30am |
Plenary Session | ||
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10:45am - 12:15pm |
Photonics and Optoelectronics II | High Frequency Devices I | Novel Dielectrics III | |
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1:30pm - 3:30pm |
Wide Band Gap Semiconductors - SiC I | High Frequency Devices II | Advanced SOI Technology I | |
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3:45pm - 5:45pm |
Wide Band Gap Semiconductors - SiC II | High Frequency Devices III | Advanced SOI Technology II | |
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7:00pm - 10:00pm |
Symposium Awards Banquet | |||
| Fri. 12/12 |
8:00am - 10:00am |
Wide Band Gap Semiconductors - GaN I | Nanoelectronics I | Material Characterization and Device Processing I |
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10:15am - 12:15pm |
Wide Band Gap Semiconductors - GaN II | Nanoelectronics II | Material Characterization and Device Processing II | |
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1:15pm - 3:15pm |
Device Modeling I | Nanoelectronics III | MEMs and Biosensors | |
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3:30pm - 5:30pm |
Device Modeling II | Novel Device Concepts | RF Effects in IC's | |
Plenary Speakers
- Steve Pearton (University of Florida): Processing Wide Bandgap Materials
- Stu Wolf (DARPA): Spintronics
- Eli Yablonovich (UCLA): Two-Dimensional Photonic Bandgaps
Invited Speakers
- METAL CONTACTS
Antoine Kahn (Princeton), “Organic Semiconductor Interfaces”
Suzanne Mohney (Penn State), “AlGaN Interface Metallurgy”
Masanori Murakami (Kyoto U.) “Ohmic Contacts to GaN” - NANOELECTRONICS
Joerg Appenzeller (IBM), "Carbon nanotube based FETs and their high density integration"
Yasuo Takahashi (NTT), "Silicon Nano-Devices and Single-Electron Devices"
Seiya Kasai (Hokkaido U.), "Prospects of III-V quantum LSIs based on hexagonal BDD approach" - HIGH-K DIELECTRICS
Gerrry Lucovsky (UNC), Either "Electronic structure of high-k gate dielectrics - applications to tunneling", or "Local atomic structure of intrinsic interface and bulk defects in high-k oxide, silicate and aluminate alloys"
Eric Garfunkel (Rutgers),"Interface composition and band alignment issues in high-K gate stacks"
Susanne Stemmer, "Structure and Stability of Alternative Gate Dielectrics".
Robin Degraeve, "Trapping in High-k Dielectrics and Related Issues". - THZ DEVICES
Tom Crowe (UVa)
Ki Wook Kim (NCSU)
Boris Gelmont (UVa)
Glenn Solomon (Stanford)
Elliot Brown (UCLA) - SOI
JP Colinge, “Advanced non classical (multigate) SOI transistors “
Dimitris E. Ioannou (George Mason), “Scaling Limits and Reliability of FD SOI”
Ted Houston (TI), “Issues of SOI CMOS circuit design”
Pierre Fazan (Swiss Federal Inst. of Technology), “Advanced SOI memory cells” - MEMS & BIOSENSORS
Tuan Vo Dinh (ORNL)
Andrew McGill (NRL) - NARROW BANDGAPS
Mark Goorsky (UCLA), Advanced substrate/buffer layer polishing techniques to optimize the growth and performance of 6.1Angstrom InAs HBTs
Steve Thomas (HRL), Fabrication and performance of 6.1Angstrom InAs HBTs and circuits - WIDE BANDGAP DEVICES
Alesandro Chini (Univ. of Calf. Santa Barbara), AlGaN/GaN HEMTs
Grigory Simin (Univ. of South Carolina), AlGaN/GaN MOSHFETs
Michael Manfra (Lucent), AlGaN/GaN HEMTs grown by MBE - MOLECULAR ELECTRONICS
Ranganathan Shashidhar (NRL)
Hong-Liang Cui (Stevens Tech. Inst.)
Jorge Seminario (U. South Carolina) - LED LIGHTING
Steve Stockman (Lumileds Lighting)
Chris Bohler (GELcore) - FLEXIBLE ELECTRONICS
Miltiadis Hatalis (Lehigh), “TFT design and the fabrication on flexible foils”
Jerzy Kinicki (U. Michigan)
James S. Im (Columbia) - SiGe DEVICES
Wilfired Haensch (IBM) - MEMS AND SENSORS
E. H. Sargent (Univ. of Toronto) - RF EFFECTS ON IC'S AND METAMATERIALS
George Elefteriades (Univ of Toronto)
Session Chairs
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