The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.
The 20th SISPAD conference will be held on September 9-11, 2015.
Location: Hyatt Regency Washington on Capitol Hill, 400 New Jersey Avenue NW, 20001, Washington DC, USA. Minutes on foot from downtown Washington DC and the National Mall. Click here to register with the SISPAD 2015 rates.
Final Paper Submission Deadline EXTENDED: July 20, 2015. Full paper submissions are now open.
Notification Letters: Notification letters were sent on June 10, 2015. If you have not received your letter, please contact firstname.lastname@example.org .
Conference Registration: Registration is now open. Please visit the registration page.
Original papers will be presented in the following subject areas:
SISPAD PortalSISPAD is held annually, with the location circulating among Asia, Europe, and the USA. For information on previous SISPAD conferences, please visit: http://www.sispad.org/.