Advance Program (subject to minor changes)

At a glance:

Versailles 1 & 2 Versailles 3 & 4 Montgomery

Wednesday December 7, 2005

1:30–3:30 PM WP1: Oxides and Dielectrics I WP2: GaN Material and Characterization WP3: Molecular and Organic Electronics
3:45–5:30 PM WP4: Oxides and Dielectrics II WP5: GaN Devices and Characterization WP6: MEMS & Integrated Sensors

Thursday December 8, 2005

10:45–12:15 AM TA1: Oxides and Dielectrics III TA2: SiC Materials and Characterization TA3: Narrowbandgap materials and devices
1:30–3:30 PM TP1: Strained MOS and NDR Devices TP2: Wide Bandgap Power Switching Devices TP3: Si-Based Nanoelectronics
3:45–5:45 PM TP4: SiGe HBTs and Strained FETs TP5: ZnO Material and Devices TP6: Silicon on Insulator
7:00–10:00 PM BANQUET

Friday December 9, 2005

8:00–10:00 AM FA1: High Frequency and Terahertz FA2: Novel Devices I FA3: Emerging Nanoelectronic Materials and Devices
10:15–12:15 AM FA4: Device Modeling I FA5: Novel Devices II FA6: Photonics
1:15–3:15 PM FP1: Device Modeling II FP2: Advanced Processing and Characterization Techniques I FP3: Optoelectronics and LED Lighting
3:30–5:30 PM FP4: Device Modeling III FP5: Advanced Processing and Characterization Techniques II FP6: Flexible Electronics

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This page was last modified on Friday, December 02, 2005.