Credits: 2


Prerequisite: Minimum grade of C- in ENEE303; and permission of ENGR-Electrical & Computer Engineering department.
Restriction: Must be in one of the following programs (Engineering: Computer; Engineering: Electrical).
Students will design and test analog and digital circuits at the transistor level. FETs and BJTs will be covered. The laboratory experiments will be tightly coordinated with ENEE303 materials.

Semesters Offered

Fall 2017, Spring 2018, Fall 2018, Spring 2019, Fall 2019

Learning Objectives

  • Gain practical electronics laboratory experience
  • Understand and analyze fundamental transistor circuit topologies
  • Understand and analyze DC bias and small signal gains for Bipolar Junction Transistor (BJT) Amplifiers
  • Understand and analyze DC bias and small signal gains for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Amplifiers
  • Understand and analyze frequency response of BJT and MOSFET amplifiers
  • Understand and analyze transistor based CMOS digital electronics building blocks
  • Build and measure single and multiple transistor circuits

Topics Covered

  • Diodes and Operational Amplifiers: Build your own power supply
  • Simple Bipolar Junction Transistor (BJT) Amplifiers
  • Power Amplifiers: Build your own Hi-Fi system
  • Frequency Response of Simple Transistor Circuits
  • Differential Amplifiers and Op-Amp Basics
  • MOS Transistor Amplifiers
  • CMOS Digital Circuits

[2] Credit only granted for: ENEE306 or ENEE307.