Credits: 3
Basic physics of devices including fields in solids, crystal structure, properties of electrons and holes. Current flow in Si using drift-diffusion model. Properties of the pn junction. Properties of devices including BJTs, FETs and their physical characteristics.
Description
Prerequisite: Minimum grade of C- in ENEE205; and permission of ENGR-Electrical & Computer Engineering department.
Restriction: Must be in one of the following programs (Engineering: Electrical; Engineering: Computer).
Semesters Offered
Spring 2018, Spring 2019, Spring 2020, Spring 2021, Spring 2022, Spring 2023
Testudo