Basic physics of devices including fields in solids, crystal structure, properties of electrons and holes. Current flow in Si using drift-diffusion model. Properties of the pn junction. Properties of devices including BJTs, FETs and their physical characteristics.
Prerequisite: Minimum grade of C- in ENEE205; and permission of ENGR-Electrical & Computer Engineering department.
Restriction: Must be in one of the following programs (Engineering: Electrical; Engineering: Computer).
Credit only granted for: ENEE312 or ENEE313.
Semesters OfferedSpring 2018, Spring 2019, Spring 2020