Faculty Directory

Daniels, Kevin

Daniels, Kevin

Assistant Professor
Electrical and Computer Engineering
Institute for Research in Electronics & Applied Physics
2305 A.V. Williams
Website(s):

Kevin M. Daniels is an Assistant Professor in the Department of Electrical and Computer Engineering with a joint appointment at the Institute for Research in Electronics and Applied Physics. Dr. Daniels received his B.S., M.E. and PhD in electrical engineering from the University of South Carolina in 2009, 2012, and 2014, respectively. From 2014 to his start at UMD, Dr. Daniels served as a National Research Council Postdoctoral Fellow residing at the U.S. Naval Research Laboratory (Washington, D.C.). There he investigated the epitaxial growth of wide bandgap materials, like silicon carbide (SiC), for power electronics and two-dimensional epitaxial graphene for high speed communications and sensors.

Education

  • B.S. '09, Electrical Engineering from the University of South Carolina
  • M.E. '12, Electrical Engineering from the University of South Carolina
  • PhD '14, Electrical Engineering from the University of South Carolina

His current research interest include the growth of various metallic, semiconducting and insulating two-dimensional materials, particularly transition metal oxides and dichalcogenides, for environmental and biological sensors, batteries, and fuel cells. He has co-authored over 30 publications in the fields of material growth, electrochemistry and plasmonics and has given over 20 conference presentations.


ENEE 313 - Introduction to Solid State Physics

ENEE 413 - Advanced Electronic Devices

ENEE 416 - Integrated Circuit Fabrication Laboratory

  1. A. El Fatimy, P. Han, N. Quirk, L. St. Marie, M. T. Dejarld, R. L. Myers-Ward, K.M. Daniels, Shojan Pavuuny, D. K. Gaskill, Y. Aytac, T. E. Murphy, P. Barbara., “Effect of defect-induced cooling on graphene hot-electron bolometers” Carbon 154, 497-502 (2019)

 

  1. S.P. Pavunny, R.L. Myers-Ward, K.M. Daniels, W. Shi, K. Sridhara, M. T. DeJarld, A. K. Boyd, F. J. Ku, P. A. Kohl, S. G. Carter, D. K. Gaskill., “On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H-SiC epilayers” Electrochimica Acta 323, 134778 (2019)

 

  1. D.J. Pennachio, C.C. Ornelas-Skarin, N. S. Wilson, S. G. Rosenberg, K. M. Daniels, R. L. Myers-Ward, D. K. Gaskill, C. R. Eddy Jr, C. J. Palmstrom., “Tailoring commensurability of hBN/graphene heterostructures using substrate morphology and epitaxial growth conditions” JVSTA 37 (5), 051503 (2019)

 

  1. D. Bloos, J. Kunc, L. Kaeswurm, R. L. Myers-Ward, K. Daniels, M. Dejarld, A. Nath, J. van Slageren, K. Gaskill, P. Neugebauer., “Contactless millimeter wave method for quality assessment of large area graphene” 2D Materials 6 (3), 035028 (2019)

 

  1. M M. Jadidi, K. M. Daniels, R. L. Myers-Ward, K. Gaskill, J. Koenig-Otto, S. Winnerl, A. B. Sushkov, D. Drew, T. E. Murphy, M. Mittendorff., “Optical Control of Plasmonic Hot Carriers in Graphene” ACS Photonics 6 (2), 302-307 (2019)

 

  1. M. DeJarld, P. Campbell, A. Friedman, M. Currie, R. Myers-Ward, A. K. Boyd, S. G. Rosenberg, S. P. Pavunny, K. Daniels, D. K. Gaskill., “Surface potential and thin film quality of low work function metals on epitaxial graphene” Scientific Reports 8(1), 16487 (2018)

 

  1. W. Kong, H. Li, K. Qiao, Y. Kim, K. Lee, Y. Nie, D. Lee, T. Osadchy, R. J. Molnar, D. K. Gaskill, R. L. Myers-Ward, K. M. Daniels, Y. Zhang, S. Sundram, Y. Yu, S. Bae, S. Rajan, Y. Shao-Horn, K. Cho, A. Ougazzaden, J. C. Grossman, J. Kim., “Polarity Governs Atomic Interaction Through Two-Dimensional Materials”, Nature Materials 17(11), 999 (2018)

 

  1. R. L. Myers-Ward, K. D. Hobart, K. M. Daniels, A. J. Giles, M. J. Tadjer, L. E. Luna, F. J. Kub, S. P. Pavunny, S. G. Carter, H. B. Banks, E. R. Glaser, P. B. Klein, B. N. Feygelson, D. K. Gaskill., “Processing of Cavities in SiC Material for Quantum Technologies” Materials Science Forum 924, 905-908 (2018)

 

  1. A. El Fatimy, A. Nath, B. D. Kong, A. K. Boyd, R. L. Myers-Ward, K.M. Daniels, M. M. Jadidi, T. E. Murphy, D. K. Gaskill, P. Barbara., “Ultra-broadband photodetectors based on epitaxial graphene quantum dots” Nanophotonics 7(4), 735-740 (2018)

 

  1. Kevin M. Daniels, M. Jadidi, A. Sushkov, A. Nath, A. Boyd, K. Sridhara,  H. Dennis Drew, R. Myers-Ward, D. K. Gaskill., “Narrow Terahertz Transmission Resonance of Quasi-freestanding Bilayer Epitaxial Graphene”,  2D Materials 4 (2), 025034, (2017)

 

  1. B. G. Barker, V. S. N. Chava, K. M. Daniels, MVS Chandrashekhar, A. B. Greytak., “Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy” 2D Materials 5 (1), 011003 (2017)

 

  1. A. Nath, B. D. Kong, A. Koehler, V. Anderson, V. Wheeler, K. Daniels, A. Boyd, E. Cleveland, R. Myers-Ward, D. K. Gaskill, K. Hobart, F. Kub, G. Jernigan.,  “Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer” Applied Physics Letters 110, 013106 (2017)

 

  1. Kevin M. Daniels, A. Obe, B. K. Daas, J. Weidner, C. Williams, T. S. Sudarshan, MVS Chandrashekhar., “Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene”, Journal of the Electrochemical Society 163 (5), E130-E134 (2016)

 

  1. M. A. Uddin, A. Singh, K. Daniels, T. Vogt, MVS Chandrashekhar, G. Koley., “Impedance Spectroscopic Analysis of Nanoparticle Functionalized Graphene/p-Si Schottky Diode Sensors”, Japanese Journal of Applied Physics 55, 110312 (2016)

                                              

  1. T. Rana, MVS Chandrashekhar, K. Daniels, T. S. Sudarshan, “SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)”, Journal of Electronic Materials 45 (4), 2019-2024 (2016)

 

  1. A. El Fatimy, R. L. Myers-Ward, A. K. Boyd, K. M. Daniels, D. K. Gaskill, P. Barbara, “Epitaxial graphene quantum dots for high-performance terahertz bolometers” Nature Nanotechnology (2016)

 

  1. Kevin M. Daniels, S. Shetu, J. Staser, J. W. Weidner, C. Williams, T. S. Sudarshan, MVS Chandrashekhar., “Mechanism of Electrochemical Hydrogenation of Epitaxial Graphene”, Journal of the Electrochemical Society 162 (4), E37-E42 (2015)

 

  1. M. M. Jadidi, A. B. Sushkov, R. L. Myers-Ward, A. K. Boyd, K. M. Daniels, D. K. Gaskill, M. S. Fuhrer, H. D. Drew, T. E. Murphy, “Tunable Terahertz Hybrid Metal-Graphene Plasmons” Nano Letters 15 (10), 7099-7104 (2015)

 

  1. T. Rana, MVS Chandrashekhar, K. Daniels, T. S. Sudarshan, “Epitaxial growth of graphene on SiC by selective etching using SiF4 in an inert ambient”, Japanese Journal of Applied Physics 54, 030304 (2015)

 

  1. Kevin M. Daniels, S. Shetu, J. Staser, J. W. Weidner, C. Williams, T. S. Sudarshan, MVS Chandrashekhar., “Electrochemical Hydrogenation of Dimensional Carbon” ECS Transactions 58 (4). 439-445 (2013)

 

  1. C. Coletti, S. Forti, A. Principi, K.V. Emtsev, A.A. Zakharov, K.M. Daniels, B.K. Daas, MVS Chandrashekhar, T. Ouisse, D. Chaussende, A. H. MacDonald, M. Polini, U. Starke, “Revealing the electronic band structure of trilayer graphene on SiC” Physical Review B 88, 155439 (2013)

 

  1. S. S. Shetu, S. Omar, K. Daniels, B. Daas, J. Andrews, S. Ma, T. S. Sudarshan., “Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC”, Journal of Applied Physics 114, 164903 (2013)

 

  1. Kevin M. Daniels, B. K. Daas, N. Srivastava, C. Williams, R. M. Feenstra, T. S. Sudarshan, MVS Chandrashekhar “Evidences of  electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies” Journal of Applied Physics 111 (11), 114306 (2012)

 

  1. Kevin M. Daniels, B. K. Daas, N. Srivastava, C. Williams, R. M. Feenstra, T. S. Sudarshan, MVS Chandrashekhar., “Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy” Materials Science Forum, Vol. 717-720, 661-664 (2012)

 

  1. B. K. Daas, K. M. Daniels, S. Shetu, T.S. Sudarshan, MVS Chandrashekhar “Epitaxial Graphene Growth on non polar SiC faces” Materials Science Forum Vol. 717-720, 633-636 (2012)

 

  1. B. K. Daas, W. K. Nomani, K. M. Daniels, T. S. Sudarshan, G. Koley and MVS Chandrashekhar “Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using Polariton Enhanced IR Reflection Spectroscopy“ , Materials Science Forum Vol. 717-720, 665-668 (2012)

 

  1. B. K. Daas, O. Sabih, S. Shetu, K. M. Daniels, S. Ma, T. S. Sudarshan, MVS Chandrashekhar "Comparison of epitaxial graphene growth on polar and non-polar 6H-SiC faces: On the growth of multilayer films" Journal of Crystal Growth and Design 12 (7), 3379-3387 (2012)

 

  1. B. K. Daas, K. M. Daniels, T. S. Sudarshan and MVS Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC” Virtual Journal of Nanoscale Science & Technology 25 (1) (2012)

 

  1. B. K. Daas, K. M. Daniels, T.S. Sudarshan and MVS Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC” Journal of Applied Physics 110 (11), 113114 (2011)

 

  1. J. L. Tedesco, G. G. Jernigan, J. C. Culbertson, J. K. Hite, Y. Yang, K. M. Daniels, R. L. Myers-Ward, C. R. Eddy, Jr., J. A. Robinson, K. A. Trumbull, M. T. Wetherington, P. M. Campbell, and D. K. Gaskill “Morphology characterization of argon-mediated epitaxial graphene on C-face SiC” Applied Physics Letters 96, 222103 (2010)

 

  1. D. J. Meyer, R. Bass, D. S. Katzer, D. A. Deen, S. C. Binary, K. M. Daniels, C. R. Eddy Jr “Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx passivated AlGaN/GaN HEMTs” Solid-State Electronics 54, 1098-1104 (2010)

 

University Medal Awarded to Electrical Engineering Senior Jerome Quenum

Medalist Honors Late Father With Career Pursuit as More Than 8,200 Terps Graduate Next Week

Q&A with ECE's New Faculty, Kevin M. Daniels and Yasser Shoukry

Kevin M. Daniels (ECE/IREAP) and Yasser Shoukry (ECE) have joined the ECE Department!